Yintoni i-polysilicon ekujoliswe kuyo

I-Polysilicon yinto ebalulekileyo ekujoliswe kuyo ukutshiza.Ukusebenzisa indlela ye-magnetron sputtering ukulungiselela i-SiO2 kunye nezinye iifilimu ezibhityileyo zingenza ukuba izinto zematrix zibe ne-optical engcono, i-dielectric kunye ne-corrosion resistance, esetyenziswa ngokubanzi kwi-touchscreen, i-optical kunye namanye amashishini.

Inkqubo yokuphosa iikristale ezinde kukuqonda ukuqiniswa kolwalathiso lwesilicon elulwelo ukusuka ezantsi ukuya phezulu ngokuthe ngcembe ngokulawula ngokuchanekileyo ubushushu besifudumezi kwindawo eshushu yesithando somlilo se-ingot kunye nokutshatyalaliswa kobushushu bemathiriyeli yokufakelwa kwe-thermal, kunye ukuqinisa isantya seekristale ezinde yi-0.8 ~ 1.2cm/h.Kwangaxeshanye, kwinkqubo yokuqina komkhombandlela, isiphumo sokwahlulwa kwezinto zetsimbi kwizinto ze-silicon zinokuqondwa, uninzi lwezinto zetsimbi zinokuhlanjululwa, kunye nesakhiwo seenkozo ze-polycrystalline se-silicon sinokusekwa.

Ukuphosa i-polysilicon kukwafuneka ukuba kwenziwe ngabom kwinkqubo yokuvelisa, ukuze kuguqulwe ingxinano yokungcola okwamkelekileyo kwi-silicon enyibilikayo.I-dopant ephambili ye-p-type cast polysilicon kushishino yi-silicon boron master alloy, apho umxholo we-boron umalunga ne-0.025%.Isixa se-doping sichongiwe ngokujoliswe kuko ukumelana ne-silicon wafer.Eyona ndlela yokuxhathisa i-0.02 ~ 0.05 Ω • cm, kwaye i-concentration ye-boron ehambelanayo malunga ne-2 × 1014cm-3. Nangona kunjalo, i-coefficient yokwahlula kwe-boron kwi-silicon yi-0.8, eya kubonisa umphumo othile wokwahlula kwinkqubo yokuqinisa i-directional, ukuba kukuba, i-boron element isasazwe kwi-gradient kwicala elithe nkqo le-ingot, kunye nokumelana nokunciphisa ngokuthe ngcembe ukusuka ezantsi ukuya phezulu kwi-ingot.