Ifilimu encinci kwithagethi eboshweyo yimo yempahla ekhethekileyo.Kwicala elithile lobunzima, isikali sincinci kakhulu, esiyi-microscopic ubungakanani obunokulinganiswa.Ukongeza, ngenxa yembonakalo kunye nojongano lobunzima befilimu, ukuqhubeka kwezinto kuphelisa, okwenza ukuba idatha yefilimu kunye nedatha ekujoliswe kuyo ibe neempawu ezahlukeneyo eziqhelekileyo. Kwaye ekujoliswe kuyo kukusetyenziswa kwe-magnetron sputtering coating, umhleli weBeijing Richmat uya kusithatha ukuba siqonde. umgaqo kunye nezakhono zokugquma.
一、Umgaqo wokugquma
Ubuchule bokugquma kukusebenzisa inkangeleko yejoli ekujoliswe kuyo, iiathom ekujoliswe kuzo ziphuma kwinto eyaziwa ngokuba yi-sputtering.Ngokuqhelekileyo, i-ionization yegesi iveliswa ngokukhutshwa kwegesi, kwaye i-ion ephilileyo ibhobhoza kwithagethi ye-cathode ngesantya esiphezulu phantsi kwesenzo sentsimi yombane, ibetha ii-athomu okanye iimolekyuli ze-athomu. Ithagethi ye-cathode, kunye nokubhabha kumphezulu we-substrate ukuba ifakwe kwifilimu.Ukuthetha nje, i-sputtering coating isebenzisa i-low pressure inert gas glow discharge ukuvelisa i-ion.
Ngokuqhelekileyo, izixhobo zokutshiza ifilimu zixhotyiswe ngee-electrode ezimbini kwigumbi lokukhupha i-vacuum, kwaye i-cathode ekujoliswe kuyo yenziwe ngedatha yokugubungela.Igumbi lokucoca lizaliswe ngegesi ye-argon ngoxinzelelo lwe-0.1 ~ 10Pa.Ukukhutshwa okukhanyayo kwenzeka kwi-cathode phantsi kwesenzo sombane ongalunganga ophezulu we-1 ~ 3kV dc okanye i-rf voltage ye-13.56mhz. I-ion ye-Argon ibhobhoza indawo ekujoliswe kuyo kwaye ibangele ukuba ii-athom ezijoliswe kuyo ziqokelele kwi-substrate.
二、 Iimpawu zezakhono zokugquma
1, Isantya sokupakisha ngokukhawuleza
Umahluko phakathi kwesantya esiphezulu semagnethi yokutshiza ielectrode kunye nenqanaba lesibini le-electrode yokutshiza kukuba umazibuthe ucwangciswe ngezantsi kwethagethi, ngoko ke ummandla wemagnethi ovaliweyo wenzeke kumphezulu wethagethi. yommandla wemagnethi owahlukileyo.Ngenxa yempembelelo yokugxila, ii-electron zibaleka ngaphantsi.I-heterogeneous magnetic field ijikeleza kwindawo ekujoliswe kuyo, kwaye ii-electron zesibini ezibanjwe kwintsimi yamagnetic zingqubuzana neemolekyuli zegesi ngokuphindaphindiweyo, eziphucula izinga eliphezulu lokuguqulwa kweemolekyuli zegesi.Ngoko ke, isantya esiphezulu se-magnetron sputtering sisebenzisa amandla aphantsi, kodwa unokufumana ukusebenza kakuhle kokugquma, kunye neempawu ezifanelekileyo zokukhupha.
2, Ubushushu be-substrate buphantsi
Isantya esiphezulu se-magnetron sputtering, ekwabizwa ngokuba yi-sputtering yobushushu obuphantsi.Isizathu kukuba isixhobo sisebenzisa izinto ezikhutshwayo kwisithuba semimandla ye-electromagnetic ethe ngqo enye kwenye.Ii-electron zesibini ezenzeka ngaphandle kwethagethi, enye kwenye.Phantsi kwentshukumo yentsimi ye-electromagnetic ethe tye, ibotshelelwa kufuphi nendawo ekujoliswe kuyo kwaye ihamba ecaleni komgaqo weenqwelo-moya kumgca ojikelezayo ojikelezayo, ibetha ngokuphindaphindiweyo kwiimolekyuli zegesi ukuze i-ionize iimolekyuli zegesi. Ngokudibeneyo, ii-electron ngokwazo ngokuthe ngcembe zilahlekelwa amandla, amaqhuma aphindaphindiweyo, de amandla abo aphantse alahleka ngokupheleleyo ngaphambi kokuba abaleke ukusuka kumphezulu wenjongo ekufutshane ne-substrate.Ngenxa yokuba amandla ee-electron ephantsi kakhulu, ubushushu bethagethi abunyuki kakhulu.Oko kwanele ukuchasana nokunyuka kobushushu be-substrate okubangelwa yi-electron bombardment ephezulu yamandla ye-diode shot yesiqhelo, egqibezela i-cryogenization.
3, Uluhlu olubanzi lwezakhiwo ze-membrane
Ubume beefilim ezibhityileyo ezifunyenwe ngomphunga wevacuum kunye nokufakwa kwesitofu kwahluke kakhulu kuleyo ifunyenwe ngokucutha isambuku esiqinileyo.Ngokwahlukileyo kwizinto eziqinileyo ezikhoyo ngokubanzi, ezihlelwa njengesiseko esifanayo kwimilinganiselo emithathu, iifilimu ezifakwe kwisigaba segesi zihlelwa njengezakhiwo ezingafaniyo.Ukukhula kwekholomu yefilimu kubangelwa indawo yokuqala ye-convex ye-substrate kunye nezithunzi ezimbalwa kwiindawo ezibalaseleyo ze-substrate.Nangona kunjalo, imilo kunye nobukhulu bekholamu yahluke kakhulu ngenxa yobushushu be-substrate, ukusasazwa komphezulu kwee-athom ezipakishweyo, ukungcwatywa kwee-athom zokungcola kunye ne-Angle yesiganeko se-athomu yesiganeko ngokumalunga nomphezulu we-substrate.Kwiqondo lokushisa eligqithisileyo, ifilimu encinci inesakhiwo esine-fibrous, i-high density, eyakhiwe ngamakristali ahlambulukileyo e-columnar, eyona sakhiwo esiyingqayizivele sefilimu yokutshiza.
Uxinzelelo lwe-sputtering kunye nesantya sokupakisha ifilimu nayo ichaphazela isakhiwo sefilimu.Ngenxa yokuba iimolekyuli zegesi zinefuthe lokucinezela ukusasazwa kwee-athomu kumphezulu we-substrate, umphumo woxinzelelo oluphezulu lwe-sputtering lufanelekile ukuhla kweqondo lokushisa kwimodeli.Ke ngoko, iifilimu ezinamanzi ezinamagqabi aneenkozo ezintle zinokufumaneka kuxinzelelo oluphezulu lwe-sputtering.Le filimu encinci yobungakanani benkozo ifanelekile ukuthambisa, ukumelana nokunxiba, ukuqina komphezulu kunye nezinye izicelo zoomatshini.
4. Lungiselela ukwakheka ngokulinganayo
Iikhompawundi, imixube, ingxubevange, njl., ekunzima ngokufanelekileyo ukugqunywa ngumphunga we-vacuum ngenxa yokuba uxinzelelo lomphunga lwamacandelo ahlukeneyo okanye ngenxa yokuba ayahlula xa eshushu. kwi-substrate, kule ngqiqo izakhono zokwenza ifilimu egqibeleleyo.Zonke iintlobo zezixhobo zingasetyenziswa kwimveliso yokwaleka kwamashishini ngokutshiza.
Ixesha lokuposa: Apr-29-2022