Inokwahlulwa ibe yiDC magnetron sputtering kunye neRF magnetron sputtering.
Indlela ye-DC sputtering ifuna ukuba ekujoliswe kuyo kudlulisele intlawulo efanelekileyo efunyenwe kwinkqubo ye-ion bombardment ukuya kwi-cathode ngokuqhagamshelana ngokusondeleyo nayo, kwaye ke le ndlela inokutshiza kuphela idatha ye-conductor, engafanelekanga kwidatha yokufakelwa, kuba Umrhumo we-ion kumphezulu awunakuthotywa xa ubhobhoza ujoliso lwe-insulation, nto leyo eya kukhokelela ekwandeni kwezinto ezinokubakho kwindawo ekujoliswe kuyo, kwaye phantse yonke i-voltage esetyenziswayo isetyenziswa ekujoliswe kuyo, ngoko ke amathuba okukhawuleza kwe-ion kunye ne-ionization phakathi Izibonda ezimbini ziya kuncitshiswa, okanye azikwazi ukuba i-ionized, Ikhokelela ekungaphumeleli kokukhutshwa okuqhubekayo, kunye nokuphazamiseka kokukhupha kunye nokuphazamiseka kwe-sputtering.Ke ngoko, irediyo frequency sputtering (RF) mayisetyenziselwe ukugquma iithagethi okanye iithagethi ezingezizo ezentsimbi ezinokuqhuba kakubi.
Inkqubo ye-sputtering ibandakanya iinkqubo eziyinkimbinkimbi zokusabalalisa kunye neenkqubo ezahlukeneyo zokudlulisa amandla: okokuqala, iinqununu zesiganeko zingqubuzana nge-elastically kunye ne-athomu ekujoliswe kuyo, kwaye inxalenye yamandla e-kinetic yeengqungquthela zesiganeko ziya kudluliselwa kwii-athomu ezijoliswe kuzo.Amandla ekinetic kwezinye iiathom ekujoliswe kuzo agqitha umqobo onokubakho owenziwe zezinye iiathom ezizijikelezileyo (5-10ev yesinyithi), zize ke zikhutshelwe ngaphandle kwilattice lettice ukuvelisa iiathom ezingaphandle kwendawo, Kwaye okunye ukungqubana okuphindaphindiweyo neeathom ezikufuphi. , okubangele ukungqubana kwemoto.Xa oku kungqubana kwe-cascade ifikelela kumphezulu wethagethi, ukuba amandla e-kinetic yee-athom ezikufutshane kumphezulu wethagethi mkhulu kunamandla okubopha umphezulu (1-6ev yesinyithi), ezi athom ziya kwahlukana kumphezulu wethagethi. kwaye ungenise ivacuum.
I-Sputtering coating isakhono sokusebenzisa iincinci ezihlawulisiweyo ukuze zibhobhoze indawo ekujoliswe kuyo kwi-vacuum ukwenza amaqhekeza aqhubhile aqokelele kwi-substrate.Ngokuqhelekileyo, i-low-pressure inert gas glow discharge isetyenziselwa ukuvelisa i-ion yesiganeko.Ithagethi ye-cathode yenziwe ngezinto zokugquma, i-substrate isetyenziswa njenge-anode, i-0.1-10pa argon okanye enye igesi ye-inert ifakwe kwigumbi lokucoca, kwaye ukukhutshwa okukhanyayo kwenzeka phantsi kwesenzo se-cathode (ithagethi) 1-3kv DC ephezulu engalunganga. amandla ombane okanye 13.56MHz RF ombane.Iionized argon ions ibhobhoza umphezulu wethagethi, ibangela ukuba iiathom ekujoliswe kuzo zitshize kwaye ziqokelelane kwisubstrate zenze ifilim ebhityileyo.Okwangoku, zininzi iindlela zokutshiza, ingakumbi ezibandakanya ukutshiza kwesibini, imfundo ephakamileyo okanye i-quaternary, ukutshiza kwemagnetron, ukutshiza okujoliswe kuko, ukutshiza kweRF, ukutshiza okucalanye, unxibelelwano lwe-asymmetric ukuphalaza kwe-RF, ukusputtering kwe-ion kunye nokuhlanjululwa kwakhona.
Ngenxa yokuba iiathom ezisasazekileyo zisasazwa ngaphandle emva kokutshintshiselana amandla e-kinetic kunye nee-ion ezilungileyo kunye namashumi amandla e-electron volts, ii-athom ezichithakeleyo zinamandla aphezulu, anceda ekuphuculeni amandla okusasazwa kwee-athomu ngexesha lokupakisha, ukuphucula ukucoleka kolungelelwaniso lokupakisha, kunye nokwenza. ifilimu elungisiweyo ine-adhesion enamandla kunye ne-substrate.
Ngexesha lokutshiza, emva kokuba igesi i-ionized, ii-ion zegesi zibhabha kwithagethi eqhagamshelwe kwi-cathode phantsi kwesenzo sentsimi yombane, kwaye ii-electron zibhabha kwi-cavity eludongeni kunye ne-substrate.Ngale ndlela, phantsi kombane ophantsi kunye noxinzelelo oluphantsi, inani le-ion lincinci kwaye amandla okutshiza ekujoliswe kuwo aphantsi;Kwi-voltage ephezulu kunye noxinzelelo oluphezulu, nangona ii-ion ezininzi zinokwenzeka, ii-electron ezibhabha kwi-substrate zinamandla aphezulu, okulula ukutshisa i-substrate kunye nokutshiza kwesibini, okuchaphazela umgangatho wefilimu.Ukongeza, amathuba okungqubana phakathi kwe-athomu ekujoliswe kuyo kunye neathomu zegesi kwinkqubo yokubhabha kwi-substrate nayo yanda kakhulu.Ngoko ke, iya kuhlakazeka kwi-cavity yonke, engayi kuchitha nje into ekujoliswe kuyo, kodwa iphinde ingcolise umaleko ngamnye ngexesha lokulungiselela iifilimu ezininzi.
Ukuze kusonjululwe ezi ntsilelo zingentla, iteknoloji yeDC magnetron sputtering yaphuhliswa ngeminyaka yoo-1970.Iphumelela ngokufanelekileyo iintsilelo zesantya esisezantsi se-cathode sputtering kunye nokwanda kobushushu be-substrate obubangelwa yi-electron.Ngoko ke, iphuhliswe ngokukhawuleza kwaye isetyenziswa ngokubanzi.
Umgaqo umi ngolu hlobo lulandelayo: kwi-magnetron sputtering, ngenxa yokuba ii-elektroni ezihambayo ziphantsi kwamandla e-Lorentz kwintsimi yemagneti, i-orbit yabo yentshukumo iya kuba yi-tortuous okanye i-spiral motion, kwaye indlela yabo yokuhamba iya kuba nde.Ke ngoko, inani longquzulwano kunye neemolekyuli zegesi ezisebenzayo zanda, ukuze ingxinano yeplasma yandiswe, kwaye ke izinga lokutshiza kwemagnetron liphuculwe kakhulu, kwaye linokusebenza phantsi kombane ophantsi we-sputtering kunye noxinzelelo lokunciphisa utyekelo longcoliseko lwefilimu;Ngakolunye uhlangothi, ikwaphucula amandla esiganeko se-athomu kumphezulu we-substrate, ngoko umgangatho wefilimu unokuphuculwa kakhulu.Ngelo xesha, xa ii-electron ezilahlekelwa amandla ngenxa yeengxabano ezininzi zifikelela kwi-anode, ziye zaba ngama-electron aphantsi kwamandla, kwaye i-substrate ayiyi kudlula.Ngoko ke, i-magnetron sputtering ineenzuzo "zesantya esiphezulu" kunye "nobushushu obuphantsi".Ukungalungi kwale ndlela kukuba ifilimu ye-insulator ayinakulungiswa, kwaye indawo engalinganiyo yemagnethi esetyenziswa kwi-electrode yemagnetron iya kubangela ukungalingani okucacileyo koko kujoliswe kuko, okukhokelela kumlinganiselo ophantsi wokusetyenziswa koko kujoliswe kuko, okuyi-20% kuphela ukuya kuma-30. %.
Ixesha lokuposa: May-16-2022