Kutshanje, abasebenzisi abaninzi baye babuza malunga neengenelo kunye nokungonakali sputtering iteknoloji yokwambathisa, Ngokweemfuno zabathengi bethu, ngoku iingcali ezivela RSM Technology Department ziya kwabelana nathi, ngethemba lokusombulula iingxaki.Kusenokwenzeka ukuba kukho ezi ngongoma zilandelayo:
1. Ukutshiza kwemagnetron okungalungelelananga
Ukucinga ukuba i-magnetic flux edlula kwi-pali yangaphakathi kunye nengaphandle yemagnethi ye-magnetron sputtering cathode ayilingani, yi-cathode ye-magnetron sputtering engalinganiyo.Umhlaba wemagnethi oqhelekileyo wokuphalaza wecathode ugxile kufutshane nendawo ekujoliswe kuyo, ngelixa imagnethi engalungelelaniyo ye-sputtering cathode iphuma kwindawo ekujoliswe kuyo.Ummandla wamagnetic wecathode yemagnethi eqhelekileyo uyithintela ngokuqinileyo iplasma kufutshane nendawo ekujoliswe kuyo, ngelixa iplasma ekufutshane ne-substrate ibuthathaka kakhulu, kwaye i-substrate ayisayi kuqhushumba ii-ion ezinamandla kunye nee-electron.I-non-equilibrium magnetron cathode field magnetic inokwandisa iplasma kude nendawo ekujoliswe kuyo kwaye intywilisele i-substrate.
2, Irediyo frequency (RF) sputtering
Umgaqo wokubeka ifilimu ye-insulating: amandla angalunganga asetyenziswa kumqhubi obekwe ngasemva kwithagethi yokukhusela.Kwiplasma yokukhutshwa okukhanyayo, xa ipleyiti yesikhokelo se-ion ikhawuleza, ibhobhoza into ekujoliswe kuyo yokugquma phambi kwayo ukuze itshize.Le sputtering inokuhlala imizuzwana eyi-10-7 kuphela.Emva koko, amandla afanelekileyo aqulunqwe ngumrhumo ochanekileyo oqokelelwe kwithagethi ye-insulating isusa amandla angalunganga kwipleyiti ye-conductor, ngoko ke ukuqhuma kwebhobho ye-ion ene-eneji ephezulu kwithagethi ye-insulating iyayeka.Ngeli xesha, ukuba i-polarity yonikezelo lwamandla ibuyiselwa umva, ii-electron ziya kubhobhoza ipleyiti yokukhusela kwaye inciphise intlawulo efanelekileyo kwi-plate yokugquma ngaphakathi kwe-10-9 imizuzwana, yenze i-zero yayo.Ngeli xesha, ukubuyisela umva i-polarity yobonelelo lwamandla kunokuvelisa i-sputtering imizuzwana eyi-10-7.
Izinto eziluncedo kwi-RF sputtering: zombini iithagethi zentsimbi kunye neethagethi zedielectric zinokutshizwa.
3, DC magnetron sputtering
Isixhobo sokugquma semagnetron sonyusa umhlaba wemagnethi kwithagethi ye-DC yokutshiza, isebenzisa amandla kaLorentz wemagnethi ukubopha kunye nokwandisa umkhondo wee-electron kumhlaba wombane, kwandisa ithuba lokungqubana phakathi kwee-electron kunye nee-athomu zegesi, kwandisa amathuba okungqubana phakathi kwee-electron kunye negesi. izinga le-ionization yee-athom zerhasi, linyusa inani lee-ion zamandla aphezulu ezibhobhoza ekujoliswe kuko kunye nokunciphisa inani lee-electron zamandla aphezulu ezibhobhoza i-substrate ecwecwe.
Izinto eziluncedo kwiplani ye-magnetron sputtering:
1. Uxinzelelo lwamandla ekujoliswe kulo lunokufikelela kwi-12w / cm2;
2. I-voltage ekujoliswe kuyo inokufikelela kwi-600V;
3. Uxinzelelo lwegesi lunokufikelela kwi-0.5pa.
Ukungalungi kweplani ye-magnetron sputtering: ekujoliswe kuko kwenza umjelo wokutshiza kwindawo yomgaqo weenqwelo-moya, ukubanjwa kwendawo ekujoliswe kuyo yonke akulingani, kwaye izinga lokusetyenziswa koko kujoliswe kuko lingama-20% ukuya kuma-30 kuphela.
I-4, i-intermediate frequency AC magnetron sputtering
Ibhekisa kwinto ephakathi kwisixhobo sokutshiza se-AC magnetron, ngokuqhelekileyo iithagethi ezimbini ezinobukhulu obufanayo kunye nemilo ziqwalaselwe ecaleni, zidla ngokubizwa ngokuba ziithagethi ezingamawele.Lufakelo olumisiweyo.Ngokuqhelekileyo, iithagethi ezimbini zinikwe amandla ngexesha elinye.Kwinkqubo ye-medium frequency frequency AC magnetron reactive sputtering, iithagethi ezimbini zisebenza njenge-anode kunye ne-cathode ngokulandelelana, kwaye zisebenza njenge-anode cathode enye kwenye kumjikelo wesiqingatha esifanayo.Xa ithagethi ikwisiqingatha esibi sesakhono somjikelo, indawo ekujoliswe kuyo ihlaselwa kwaye ichithwe ziiyoni ezilungileyo;Kumjikelo wesiqingatha esilungileyo, ii-electron zeplasma zikhawuleziswa ukuya kwindawo ekujoliswe kuyo ukuze kuthintelwe intlawulo elungileyo eqokelelwe kwindawo ekhuselayo yendawo ekujoliswe kuyo, engacinezeli nje ukuvutha komgangatho ekujoliswe kuwo, kodwa iphinde isuse isenzeko “ ukunyamalala kwe-anode."
Uncedo lwe-intermediate frequency double target reactive sputtering zezi:
(1) Izinga eliphezulu lokubekwa.Kwiithagethi zesilicon, ireyithi yokubeka i-medium frequency reactive sputtering ili-10 ngokuphindwe ka-10 kune-DC reactive sputtering;
(2) Inkqubo ye-sputtering inokuzinziswa kwindawo yokusebenza emiselweyo;
(3) Isiganeko esithi "ukuvutha" siyapheliswa.Ubuninzi besiphako sefilimu yokukhusela elungiselelwe yimiyalelo emininzi yobukhulu obungaphantsi kwaleyo ye-DC reactive sputtering method;
(4) Ubushushu obuphezulu be-substrate bunenzuzo ekuphuculeni umgangatho kunye nokunamathela kwefilimu;
(5) Ukuba unikezelo lombane kulula ukungqamana noko kujoliswe kuko kunombane weRF.
5. Ukutshiza kwemagnetron esebenzayo
Kwinkqubo ye-sputtering, i-reaction gas isondliwa ukuba iphendule kunye neengqungquthela ezitshisiweyo ukuvelisa iifilimu ezidibeneyo.Inokubonelela ngegesi esebenzayo ukusabela kunye nethagethi yekhompawundi ye-sputtering ngaxeshanye, kwaye inokubonelela ngegesi esebenzayo ukuba isabele kunye nentsimbi yokutshiza okanye i-alloy target ngaxeshanye ukulungiselela iifilimu ezihlanganisiweyo kunye nomlinganiselo onikiweyo wekhemikhali.
Izinto eziluncedo kwiifilimu ezisebenzayo zemagnetron sputtering:
(1) Izinto ezijoliswe kuzo kunye neegesi zokuphendula ezisetyenziselwa i-oksijini, i-nitrogen, i-hydrocarbons, njl., ngokuqhelekileyo kulula ukufumana iimveliso ezihlambulukileyo, ezihambelana nokulungiswa kweefilimu ezihlangeneyo ezicocekileyo;
(2) Ngokuhlengahlengisa iiparamitha zenkqubo, iifilimu zekhemikhali okanye ezingezizo iikhemikhali zingalungiswa, ukwenzela ukuba iimpawu zeefilimu zilungelelaniswe;
(3) Iqondo lokushisa le-substrate aliphezulu, kwaye kukho izithintelo ezimbalwa kwi-substrate;
(4) Ilungele ukugquma iyunifomu yendawo enkulu kwaye iqonda imveliso yoshishino.
Kwinkqubo ye-reactive magnetron sputtering, ukuzinza kwe-compound sputtering kulula ukwenzeka, ingakumbi kubandakanywa:
(1) Kunzima ukulungiselela iithagethi ezixandileyo;
(2) Isiganeko sokubetha kwe-arc (ukukhutshwa kwe-arc) okubangelwa yityhefu ekujoliswe kuyo kunye nokungazinzi kwenkqubo ye-sputtering;
(3) Iqondo eliphantsi lokubeka i-sputtering;
(4) Ubuninzi besiphako sefilimu buphezulu.
Ixesha lokuposa: Jul-21-2022